Another breakthrough in nano world of magnetoresistance

Another breakthrough in nano world of magnetoresistance

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Things are heating up in the nano world again. This time, it’s at a low temperature but with increased efficiency.

A multinational team of researchers has demonstrated a long-winded yet important effect called Coulomb Blockade Anisotropic Magnetoresistance (CBAMR). This effect, according to the scientists, shows promise in the fields of read heads and RAM.

Specifically, they built a device made of a ferromagnetic material that accomplishes the first magnetic transistor resistance alteration between being “on” and “off.” They were then able to control the voltage of that magnetoresistant effect, which can translate into the manufacture of logic circuits that have a very low tendency to spiral out of control. Such control is needed to maintain memory and continuity (and reduce “magnetic noise” on computer chips, which crops up naturally the smaller you go in the nano world.)

All of this was achieved at a relatively low temperature. Practical applications of the effect in terms of ever-smaller and ever-denser hard disk drives is still a concept, but the possibility is more real now than before, especially given the tiny-ness of the device.

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