Toshiba today announced NAND flash memory, a cost-effective choice for the local storage memory of advanced cell phones required to support additional applications and features.
“High-density NAND flash is approximately 40 to 50 percent of the cost of NOR flash, offers faster programming and erase times, and requires less space because of its small cell size,” said Brian Kumagai, business development manager, NAND Flash, for TAEC. “By simplifying the design challenge of integrating a memory subsystem that combines SRAM, PSRAM, NOR and NAND, our new ‘Chip Enable Don’t Care’ NAND helps make NAND flash an attractive alternative to cell phone designers for the application and storage memory required in advanced mobile phones.”
One of the challenges facing designers of advanced cell phones is the memory subsystem required to support auxiliary applications such as Internet browsing, text messaging, games and even digital camera capabilities. Not long ago, a typical talk-only mobile phone utilized 4 Megabits (Mb) to 8Mb of low-power SRAM for phone number data storage and 16Mb of NOR flash for code storage. The additional applications found in today’s feature-rich mobile phones have increased typical memory requirements to 8Mb to 16Mb of low-power SRAM for data backup, 32Mb to 128Mb of DRAM or Pseudo SRAM for movie or music working area, 128Mb to 256Mb high speed NOR flash for bootable code storage and 128Mb to 256Mb or more additional memory for application software and storage.
Toshiba also unveild today a new multi-chip package (MCP) products which have five and six chips stacked inside ball grid array (BGA) packages to create single 9mm x 12mm x 1.6mm components. Toshiba Corp (Toshiba) will develop five and six-chip MCPs with various combinations of NOR flash, NAND flash, Static RAM (SRAM), and Pseudo SRAM (PSRAM) to meet the complex memory requirements of digital camera phones and feature-rich 3G cell phones.